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Suppressing potential fluctuations in quantum dots

Published on:

14 December 2023

Primary Category:

Mesoscale and Nanoscale Physics

Paper Authors:

Collin C. D. Frink,

Benjamin D. Woods,

Merritt P. Losert,

E. R. MacQuarrie,

Mark Friesen,

M. A. Eriksson

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Key Details

Metal gates cause complicated strain fields affecting quantum dot confinement

Simulations explain observed strain features in quantum dots

Overlapping gates suppress potential fluctuations when oxide layers are thin

Simple gate design rules can avoid strain-induced uniformity issues

AI generated summary

Suppressing potential fluctuations in quantum dots

This paper investigates strain-induced fluctuations in the potential energy of silicon quantum dots, arising from lattice mismatch, thermal contraction differences, and metal gate depositional stress. Simulations show that potential fluctuations can be suppressed by using overlapping metal gates covering the full active region, provided oxide layers between gates are thin.

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