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Quantum phase transitions in antiferromagnetic MnBi2Te4 devices

Published on:

14 May 2024

Primary Category:

Materials Science

Paper Authors:

Zichen Lian,

Yongchao Wang,

Yongqian Wang,

Yang Feng,

Zehao Dong,

Shuai Yang,

Liangcai Xu,

Yaoxin Li,

Bohan Fu,

Yuetan Li,

Wanjun Jiang,

Chang Liu,

Jinsong Zhang,

Yayu Wang


Key Details

MnBi2Te4 hosts novel topological phases like the quantum anomalous Hall effect, enabled by its layered antiferromagnetic order

A 7-layer device with AlOx capping exhibited cascading transitions when tuning gate voltage and perpendicular magnetic field

Transitions originate from distinct spin configurations’ influence on transport properties

In-plane magnetic field enhanced coercivity and exchange gap, unlike a ferromagnet

Peculiar response arises from inherent spin flip and flop transitions in this van der Waals antiferromagnet

AI generated summary

Quantum phase transitions in antiferromagnetic MnBi2Te4 devices

Researchers fabricated a 7-layer MnBi2Te4 device with an AlOx capping layer, enabling them to uncover cascading quantum phase transitions attributed to complex spin dynamics when tuning gate voltage and magnetic field. Unlike a ferromagnetic system, an in-plane field increased coercivity and the topological state's energy gap.

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