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Cryogenic control of silicon quantum device thresholds

Published on:

21 December 2023

Primary Category:

Mesoscale and Nanoscale Physics

Paper Authors:

M. A. Wolfe,

Brighton X. Coe,

Justin S. Edwards,

Tyler J. Kovach,

Thomas McJunkin,

Benjamin Harpt,

D. E. Savage,

M. G. Lagally,

R. McDermott,

Mark Friesen,

Shimon Kolkowitz,

M. A. Eriksson

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Key Details

Illumination under bias sets device threshold to applied gate voltage

Available interface charge states limit maximum positive shift

Negative shifts show intensity-dependent saturation

Results explain cryogenic optical resetting of quantum devices

AI generated summary

Cryogenic control of silicon quantum device thresholds

Researchers demonstrate a technique to systematically shift the operating voltage threshold in silicon quantum devices at cryogenic temperatures. By illuminating the device while applying a gate voltage, they set a specific and reproducible threshold over a wide voltage range. They present an intuitive model explaining how light generates electron-hole pairs that screen the gate bias, and discuss mechanisms enabling threshold shifts above and below expected limits.

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