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Suppressed quantum interference in topological insulator-antiferromagnet bilayers

Paper Authors:

Ryan Van Haren,

David Lederman

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Key Details

MBE growth of 9nm (BiSb)2Te3 films on MnF2, Al2O3 and MgF2 substrates

Magnetoconductivity shows weak antilocalization, suppressed for MnF2 interface

Indicates magnetic scattering or band modification at interface

Dirac fermion model derives Fermi velocity and scattering times

Possible small gap opening at Dirac point due to MnF2 proximity

AI generated summary

Suppressed quantum interference in topological insulator-antiferromagnet bilayers

Thin films of the topological insulator (BiSb)2Te3 were grown on antiferromagnetic MnF2 and nonmagnetic substrates. Magnetoconductivity measurements showed suppressed weak antilocalization in the MnF2 bilayers, indicating either enhanced magnetic scattering or proximity-induced band modification at the interface. Fits to magnetoconductivity models suggest the Dirac fermions either experience more magnetic scattering, or develop a small gap at the Dirac point when interfaced with MnF2.

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