New quantum defects in silicon for telecom emission
Published on:
8 May 2024
Primary Category:
Materials Science
Paper Authors:
Yihuang Xiong,
Jiongzhi Zheng,
Shay McBride,
Xueyue Zhang,
Sinéad M. Griffin,
Geoffroy Hautier
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Key Details
Screens 22,000+ defects in silicon using high-throughput computations
Discovers new 'T center-like' defects formed by group III + carbon
New defects have similar structure/properties to known T center
Some have better optical properties than T center
Higher symmetry aids alignment to magnetic fields
Proposes hydrogen-assisted synthesis route
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AI generated summary
New quantum defects in silicon for telecom emission
This paper computationally screens over 22,000 defects in silicon to discover new quantum emitters formed by group III elements bound to carbon, which are structurally and electronically analogous to the known T center defect. Some have improved optical properties and higher symmetry. The paper suggests these could be promising spin-photon interfaces, and proposes a hydrogen-assisted synthesis route.
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