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Magnetic layers induce quantum anomalous Hall effect in topological insulator

Published on:

8 September 2023

Primary Category:

Mesoscale and Nanoscale Physics

Paper Authors:

Nezhat Pournaghavi,

Banasree Sadhukhan,

Anna Delin

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Key Details

Magnetic CrI3 layers induce exchange gap at Bi2Se3 topological insulator surface states

Edge states emerge inside exchange gap when in quantum anomalous Hall regime

Width/thickness of TI slab affect whether edge states are gapped/gapless

DFT and tight-binding models reveal conditions to observe quantized edge state conductance

AI generated summary

Magnetic layers induce quantum anomalous Hall effect in topological insulator

This paper studies how adding magnetic layers above and below a topological insulator can break time-reversal symmetry and induce the quantum anomalous Hall effect. The authors use density functional theory and tight-binding models to show that the magnetic layers create an exchange gap at the topological insulator's surface states. They find that edge states emerge inside this gap, which can lead to quantized conductance. The width and thickness of the topological insulator slab influence whether the edge states are gapped or gapless. Overall, this work provides insights into realizing the quantum anomalous Hall phase in magnetic topological insulator heterostructures.

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